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89C51 ADM708S AT712 ET401 A1040 BZX384 DJN013B 5KP210
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  2SC3420 transistor (npn) features power dissipation p cm : 1.5 w (tamb=25 ) collector current i cm : 5 a collector-base voltage v (br)cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 50 v collector-emitter breakdown voltage v (br)ceo ic= 10 ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 8 v collector cut-off current i cbo v cb = 40 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 8 v, i c =0 0.1 a h fe(1) v ce = 2 v, i c = 0.5 a 140 600 dc current gain h fe(2) v ce = 2 v, i c = 4 a 70 collector-emitter saturation voltage v ce(sat) i c = 4 a, i b = 0.1 a 1 v base-emitter voltage v be v ce = 2 v, i c = 4 a 1.5 v transition frequency f t v ce = 2 v, i c = 0.5 a 100 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 40 pf classification of h fe(1) rank y gr bl range 140-240 200-400 300-600 marking 1 2 3 to-126c 1. emitter 2. collector 3. base 2SC3420 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd


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